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Memory refresh is the process of periodically reading information from an area of computer memory, and immediately rewriting the read information to the same area with no modifications. Each memory refresh cycle refreshes a succeeding area of memory. Memory refresh is most often associated with modern dynamic random access memory. Due to the problem of fading of charge in DRAM information stored in capacitors become 1's to 0's.To prevent this from happening, design engineers adds an extra circuitry to recharge cells periodically. This process is refresh. If a cell is less than half recharged,it is determined to be zero,and cell is not recharged.
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memory region 存储区域
| memory refresh in English
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