MOSFET

field-effect transistor in which the gate is separated from the conducting channel by an insulation (Electronics)

The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET).
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Metal Oxide Semiconductor Field-Effect Transistor

Metal Oxide Semiconductor Field Effect Transistor. A type of transistor where a conductive electrode is separated from the semiconductor surface by an insulating layer, typically silicon dioxide. Varying the voltage on the conductive electrode controls the flow of current along the semiconductor surface.

METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR. MOSFET