MESFET

Overview MESFET stands for Metal-Semiconductor Field Effect Transistor. It is quite similar to a JFET in construction and terminology. The difference is that instead of a using a p-n junction for a gate, a Schottky (metal-semiconductor) junction is used. MESFETs are usually constructed in compound semiconductor technologies lacking high quality surface passivation such as GaAs, InP, or SiC, and are faster but more expensive than silicon-based JFETs or MOSFETs. Production MESFETs are operated up to approximately 30 GHz, and are commonly used for microwave frequency communications and radar. From a digital circuit design perspective, it is increasingly difficult to use MESFETs as the basis for digital integrated circuits as the scale of integration goes up, compared to CMOS silicon based fabrication.
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Metal Shottky FET - a field effect transistor that has a metal shottky barrier for a gate. Commonly used for high frequency application on compound semiconductors.