The insulated-gate bipolar transistor is a three-terminal power semiconductor device that combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated-gate FET for the control input, and a bipolar power transistor as a switch, in a single device. The IGBT is used in medium- to high-power applications such as switched-mode power supply, traction motor control and induction heating. Large IGBT modules typically consist of many devices in parallel and can have very high current handling capabilities in the order of hundreds of amps with blocking voltages of 6,000 volts.
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