Field Effect Transistor

The field-effect transistor (FET) is a type of transistor that relies on an electric field to control the shape and hence the conductivity of a 'channel' in a semiconductor material. The concept of the field effect transistor predates the bipolar junction transistor (BJT), though it was not physically implemented until after BJTs, due to the limitations of semiconductor materials and relative ease of manufacturing BJTs compared to FETs at the time.
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Noun
1. a transistor in which most current flows in a channel whose effective resistance can be controlled by a transverse electric field
(synonym) FET
(hypernym) transistor, junction transistor, electronic transistor

<electronics> (FET) A transistor with a region of donor material with two terminals called the "source" and the "drain", and an adjoining region of acceptor material between, called the "gate". The voltage between the gate and the substrate controls the current flow between source and drain by depleting the donor region of its charge carriers to greater or lesser extent.
There are two kinds of FET's, Junction FETs and MOSFETs.
Because no current (except a minute leakage current) flows through the gate, FETs can be used to make circuits with very low power consumption.
Contrast bipolar transistor.
(1995-10-05)

a transistor that uses an electric field to accumulate or deplete a channel region to block or allow conduction.

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