Chemical vapor deposition
Chemical vapor deposition (CVD) is a
chemical process used to produce high-purity, high-performance solid materials. The process is often used in the
semiconductor industry to produce
thin films. In a typical CVD process, the
wafer (substrate) is exposed to one or more volatile s, which
react and/or
decompose on the substrate surface to produce the desired deposit. Frequently, volatile
byproducts are also produced, which are removed by gas flow through the reaction chamber.
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Chemical Vapor Deposition
a process whereby a film is deposited by reacting chemicals together in the gaseous or vapor phase to form a film. The gases or vapors utilized for CVD are compounds that contain the element to be deposited and that may be induced to react with a substrate or other gas(es) to deposit a film. The CVD reaction may be thermally activated, plasma induced, plasma enhanced CVD or activated by light in photon induced CVD. See also, Atmospheric Chemical Vapor Deposition,
Low Pressure Chemical Vapor Deposition,
Metal Organic Chemical Vapor Deposition, Photo Enhanced Chemical Vapor Deposition.