Bipolar Transistor

BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test.A bipolar junction transistor (BJT) is a type of transistor. It is a three-terminal device constructed of doped semiconductor material and may be used in  amplifying or switching applications. Bipolar transistors are so named because their operation involves both electrons and holes. Although a small part of the transistor current is due to the flow of majority carriers, most of the transistor current is due to the flow of minority carriers and so BJTs are classified as 'minority-carrier' devices.
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<electronics> A transistor made from a sandwich of n- and p-type semiconductor material: either npn or pnp. The middle section is known as the "base" and the other two as the "collector" and "emitter". When used as an amplifying element, the base to emitter junction is in a "forward-biased" (conducting) condition, and the base to collector junction is "reverse-biased" or non-conducting. Small changes in the base to emitter current (the input signal) cause either holes (for pnp devices) or free electrons (for npn) to enter the base from the emitter. The attracting voltage of the collector causes the majority of these charges to cross into and be collected by the collector, resulting in amplification.
Contrast field effect transistor.
(1995-10-04)

a transistor that uses both holes and electrons for conduction. A bipolar transistor has an emitter of one semiconductor type that emits carriers into a base region of opposite semiconductor type, and a collector region of same semiconductor type separated from the emitter by the base, the collector collects electrons that transit the base region. Modulating the current injected into the base terminal of a bipolar transistor will modulate the current flowing through the base from the emitter to the collector. Properly biased a signal injected into the base will result in an amplified signal appearing at the collector terminal.

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