Avalanche photodiode

(in semiconductors) photodiode that uses the avalanche effect to increase the strength of a photocurrent signal and enable fast light-controlled switching operations, APD (Electronics)

Avalanche photodiodes (APDs) are photodetectors that can be regarded as the semiconductor analog to photomultipliers. By applying a high reverse bias voltage (typically 100-200 V in silicon), APDs show an internal current gain effect (around 100) due to impact ionization (avalanche effect). However, some silicon APDs employ alternative doping and beveling techniques compared to traditional APDs that allow greater voltage to be applied (> 1500 V) before breakdown is reached and hence a greater operating gain (> 1000). In general, the higher the reverse voltage the higher the gain. Among the various expressions for the APD multiplication factor (M), an instructive expression is given by the formula
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A photodiode that operates with a reverse-bias voltage that causes the primary photocurrent to undergo amplification by cumulative multiplication of charge carriers. Note: As the reverse-bias voltage increases toward the breakdown, hole-electron pairs are created by absorbed photons. An avalanche effect occurs when the hole-electron pairs acquire sufficient energy to create additional pairs when the incident photons collide with the ions, i.e., the holes and electrons. Thus, a signal gain is achieved. [After 2196]

avalanche photodiode
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